Parameter extraction and selection for a scalable N-type SiC MOSFETs model and characteristic verification along with conventional dc-dc buck converter integration.

ABSTRACT: Most silicon carbide (SiC) MOSFET models are application-specific. These are already defined by the manufacturers and their parameters are mostly partially accessible due to restrictions. The desired characteristic of any SiC model becomes highly important if an individual wants to visualize the impact of changing intrinsic parameters as well. Also, it requires a model prior knowledge to vary these parameters accordingly. This paper proposes the parameter extraction and its selection for Silicon Carbide (SiC) power N-MOSFET model in a unique way. The extracted parameters are verified through practical implementation with a small-scale high power DC-DC 5 to 2.5 output voltage buck converter using both hardware and software emphasis. The parameters extracted using the proposed method are als

SUBMITTER: Khalid H 

PROVIDER: S-EPMC9838867 | biostudies-literature | 2023

REPOSITORIES: biostudies-literature