Ultralow contact resistance in organic transistors via orbital hybridization.

ABSTRACT: Organic field-effect transistors (OFETs) are of interest in unconventional form of electronics. However, high-performance OFETs are currently contact-limited, which represent a major challenge toward operation in the gigahertz regime. Here, we realize ultralow total contact resistance (R_c) down to 14.0 Ω ∙ cm in C₁₀-DNTT OFETs by using transferred platinum (Pt) as contact. We observe evidence of Pt-catalyzed dehydrogenation of side alkyl chains which effectively reduces the metal-semiconductor van der Waals gap and promotes orbital hybridization. We report the ultrahigh performance OFETs, including hole mobility of 18 cm² V^-1 s^-1, saturation current of 28.8 μA/μm, subthreshold swing of 60 mV/dec, and intrinsic cutoff frequency of 0.36 

SUBMITTER: Zeng J 

PROVIDER: S-EPMC9852566 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature