Vertical Etching of Scandium Aluminum Nitride Thin Films Using TMAH Solution.

ABSTRACT: A wide bandgap, an enhanced piezoelectric coefficient, and low dielectric permittivity are some of the outstanding properties that have made ScxAl1-xN a promising material in numerous MEMS and optoelectronics applications. One of the substantial challenges of fabricating ScxAl1-xN devices is its difficulty in etching, specifically with higher scandium concentration. In this work, we have developed an experimental approach with high temperature annealing followed by a wet etching process using tetramethyl ammonium hydroxide (TMAH), which maintains etching uniformity across various Sc compositions. The experimental results of etching approximately 730 nm of ScxAl1-xN (x = 0.125, 0.20, 0.40) thin films show that the etch rate decreases with increasing scandium content. Nevertheless, sidewall

SUBMITTER: Shifat ASMZ 

PROVIDER: S-EPMC9863442 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature