THz Thin Film Varactor Based on Integrated Ferroelectric HfZrO₂.

ABSTRACT: In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf_0.5Zr_0.5O₂) metal-ferroelectric-metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS technology as a shunting capacitor for the coplanar waveguide (CPW) transmission line. At low frequencies, the varactor shows a slight imprint behavior, with a maximum tunability of 15% after the wake-up. In the radio- and mmWave frequency range, the varactor's maximum tunability decreases slightly from 13% at 30 MHz to 10% at 110 GHz. Ferroelectric varactors were known for their frequency-independent, linear tunability as well as low loss. However, this potential was never fully realized

SUBMITTER: Abdulazhanov S 

PROVIDER: S-EPMC9879207 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature