Selective-Area, Water-Free Atomic Layer Deposition of Metal Oxides on Graphene Defects.

ABSTRACT: Passivating defective regions on monolayer graphene with metal oxides remains an active area of research for graphene device integration. To effectively passivate these regions, a water-free atomic layer deposition (ALD) recipe was developed and yielded selective-area ALD (sa-ALD) of mixed-metal oxides onto line defects in monolayer graphene. The anisotropically deposited film targeted high-energy defect sites that were formed during synthesis or transfer of the graphene layer. The passivating layer exceeded 10 nm thickness with minimal deposition onto the basal plane of graphene. The mixed-metal oxide film was of comparable quality to films deposited using nonselective water-based ALD methods, as shown by X-ray photoelectron spectroscopy. The development of sa-ALD techniques to target def

SUBMITTER: Mazza MF 

PROVIDER: S-EPMC9888651 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature