Atomic-Scale Modification of Oxidation Phenomena on the Ge(100) Surface by Si Alloying.

ABSTRACT: Properties of Ge oxides are significantly different from those of widely used Si oxides. For example, the instability of GeO _x at device junctions causes electronic defect levels that degrade the performance of Ge-containing devices (e.g., transistors and infrared detectors). Therefore, the passivating Si layers have been commonly used at Ge interfaces to reduce the effects of Ge oxide instability and mimic the successful strategy of Si oxidation. To contribute to the atomic-scale knowledge and control of oxidation of such Si-alloyed Ge interfaces (O/Si/Ge), we present a synchrotron radiation core-level study of O/Si/Ge, which is combined with scanning probe microscopy measurements. The oxidation processes and electronic properties of O/Si/Ge(100) are examined as function

SUBMITTER: Kuzmin M 

PROVIDER: S-EPMC9888653 | biostudies-literature | 2022 Mar

REPOSITORIES: biostudies-literature