Sulfurization engineering of single-zone CVD vertical and horizontal MoS₂ on p-GaN heterostructures for self-powered UV photodetectors.

ABSTRACT: Molybdenum disulfide (MoS₂) has been attracting considerable attention due to its excellent electrical and optical properties. We successfully grew high-quality, large-area and uniform few-layer (FL)-MoS₂ on p-doped gallium nitride (p-GaN) using a simplified sulfurization technique by the single-zone CVD of a Mo seed layer via E-beam evaporation. Tuning the sulfurization parameters, namely temperature and duration, has been discovered to be an effective strategy for improving MoS₂ orientation (horizontally aligned and vertically aligned) and quality, which affects photodetector (PD) performance. The increase in the sulfurization temperature to 850 °C results in improved structural quality and crystallite size. However, a prolonged sulfurization durat

SUBMITTER: Zulkifli N'A 

PROVIDER: S-EPMC9890942 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature