Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors.

ABSTRACT: The idea of benefitting from the properties of III-V semiconductors and silicon on the same substrate has been occupying the minds of scientists for several years. Although the principle of III-V integration on a silicon-based platform is simple, it is often challenging to perform due to demanding requirements for sample preparation rising from a mismatch in physical properties between those semiconductor groups (e.g. different lattice constants and thermal expansion coefficients), high cost of device-grade materials formation and their post-processing. In this paper, we demonstrate the deposition of group-III metal and III-V semiconductors in microfabricated template structures on silicon as a strategy for heterogeneous device integration on Si. The metal (indium) is selectively electrode

SUBMITTER: Hnida-Gut KE 

PROVIDER: S-EPMC9902586 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature