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Room-temperature spin injection from a ferromagnetic semiconductor.

ABSTRACT: Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie temperature (T_C) and BiSb is a topological insulator (TI). Despite the very small magnetization of (Ga,Fe)Sb at room temperature (45 emu/cc), we detected spin injection from (Ga,Fe)Sb by utilizing the large inverse spin Hall effect (ISHE) in BiSb. Our study provides the first demonstration of spin injection at room temperature from a FMS.

SUBMITTER: Goel S

PROVIDER: S-EPMC9905071 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature

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Room-temperature spin injection from a ferromagnetic semiconductor.

Goel Shobhit S Khang Nguyen Huynh Duy NHD Osada Yuki Y Anh Le Duc LD Hai Pham Nam PN Tanaka Masaaki M

Scientific reports 20230207 1

Spin injection using ferromagnetic semiconductors at room temperature is a building block for the realization of spin-functional semiconductor devices. Nevertheless, this has been very challenging due to the lack of reliable room-temperature ferromagnetism in well-known group IV and III-V based semiconductors. Here, we demonstrate room-temperature spin injection by using spin pumping in a BiSb/(Ga,Fe)Sb heterostructure, where (Ga,Fe)Sb is a ferromagnetic semiconductor (FMS) with high Curie tempe ...[more]

PMID: 36750728

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