Comprehensive analysis of current leakage at individual screw and mixed threading dislocations in freestanding GaN substrates.

ABSTRACT: The electrical characteristics of Schottky contacts on individual threading dislocations (TDs) with a screw-component in GaN substrates and the structures of these TDs were investigated to assess the effects of such defects on reverse leakage currents. Micrometer-scale platinum/GaN Schottky contacts were selectively fabricated on screw- and mixed-TD-related etch pits classified based on the pit size. Current-voltage (I-V) data acquired using conductive atomic force microscopy showed that very few of the screw TDs generated anomalously large reverse leakage currents. An analysis of the temperature dependence of the I-V characteristics established that the leakage current conduction mechanisms for the leaky screw TDs differed from those for the other screw and mixed TDs. Specifically, anomal

SUBMITTER: Hamachi T 

PROVIDER: S-EPMC9918472 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature