Growth of Low-Defect Nitrogen-Doped Graphene Film Using Condensation-Assisted Chemical Vapor Deposition Method.

ABSTRACT: It is significantly important to modulate the electrical properties of graphene films through doping for building desired electronic devices. One of the effective doping methods is the chemical vapor deposition (CVD) of graphene films with heteroatom doping during the process, but this usually results in nitrogen-doped graphene with low doping levels, high defect density, and low carrier mobility. In this work, we developed a novel condensation-assisted CVD method for the synthesis of high-quality nitrogen-doped graphene (NG) films at low temperatures of 400 °C using solid 3,4,5-trichloropyridine as a carbon and nitrogen source. The condensation system was employed to reduce the volatilization of the solid source during the non-growth stage, which leads to a great improvement of quality of

SUBMITTER: Guo Z 

PROVIDER: S-EPMC9921703 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature