Monolithic InSb nanostructure photodetectors on Si using rapid melt growth.

ABSTRACT: Monolithic integration of InSb on Si could be a key enabler for future electronic and optoelectronic applications. In this work, we report the fabrication of InSb metal-semiconductor-metal photodetectors directly on Si using a CMOS-compatible process known as rapid melt growth. Fourier transform spectroscopy demonstrates a spectrally resolved photocurrent peak from a single crystalline InSb nanostructure with dimensions of 500 nm × 1.1 μm × 120 nm. Time-dependent optical characterization of a device under 1550 nm illumination indicated a stable photoresponse with responsivity of 0.50 A W^-1 at 16 nW illumination, with a time constant in the range of milliseconds. Electron backscatter diffraction spectroscopy revealed that the single crystalline InSb nanostructures contain occasio

SUBMITTER: Menon H 

PROVIDER: S-EPMC9926903 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature