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A stability bound on the [Formula: see text]-linear resistivity of conventional metals.

ABSTRACT: Perturbative considerations account for the properties of conventional metals, including the range of temperatures where the transport scattering rate is 1/τ_tr = 2πλT, where λ is a dimensionless strength of the electron-phonon coupling. The fact that measured values satisfy λ ≲ 1 has been noted in the context of a possible "Planckian" bound on transport. However, since the electron-phonon scattering is quasielastic in this regime, no such Planckian considerations can be relevant. We present and analyze Monte Carlo results on the Holstein model which show that a different sort of bound is at play: a "stability" bound on λ consistent with metallic transport. We conjecture that a qualitatively similar bound on the strength of residual interactions, which is often stronger than Planckian, may apply to metals more generally.

SUBMITTER: Murthy C

PROVIDER: S-EPMC9934301 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature

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A stability bound on the [Formula: see text]-linear resistivity of conventional metals.

Murthy Chaitanya C Pandey Akshat A Esterlis Ilya I Kivelson Steven A SA

Proceedings of the National Academy of Sciences of the United States of America 20230112 3

Perturbative considerations account for the properties of conventional metals, including the range of temperatures where the transport scattering rate is 1/τtr = 2πλT, where λ is a dimensionless strength of the electron-phonon coupling. The fact that measured values satisfy λ ≲ 1 has been noted in the context of a possible "Planckian" bound on transport. However, since the electron-phonon scattering is quasielastic in this regime, no such Plan ...[more]

PMID: 36634139

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Project description:The growth of SrRuO[Formula: see text] (SRO) thin film with high-crystallinity and low residual resistivity (RR) is essential to explore its intrinsic properties. Here, utilizing the adsorption-controlled growth technique, the growth condition of initial SrO layer on TiO[Formula: see text]-terminated SrTiO[Formula: see text] (STO) (001) substrate was found to be crucial for achieving a low RR in the resulting SRO film grown afterward. The optimized initial SrO layer shows a c(2 [Formula: see text] 2) superstructure that was characterized by electron diffraction, and a series of SRO films with different thicknesses (ts) were then grown. The resulting SRO films exhibit excellent crystallinity with orthorhombic-phase down to [Formula: see text] 4.3 nm, which was confirmed by high resolution X-ray measurements. From X-ray azimuthal scan across SRO orthorhombic (02 ± 1) reflections, we uncover four structural domains with a dominant domain of orthorhombic SRO [001] along cubic STO [010] direction. The dominant domain population depends on t, STO miscut angle ([Formula: see text]), and miscut direction ([Formula: see text]), giving a volume fraction of about 92 [Formula: see text] for [Formula: see text] 26.6 nm and [Formula: see text] (0.14[Formula: see text], 5[Formula: see text]). On the other hand, metallic and ferromagnetic properties were well preserved down to t [Formula: see text] 1.2 nm. Residual resistivity ratio (RRR = [Formula: see text]/[Formula: see text]) reduces from 77.1 for t [Formula: see text] 28.5 nm to 2.5 for t [Formula: see text] 1.2 nm, while [Formula: see text] increases from 2.5 [Formula: see text]cm for t [Formula: see text] 28.5 nm to 131.0 [Formula: see text]cm for t [Formula: see text] 1.2 nm. The ferromagnetic onset temperature ([Formula: see text]) of around 151 K remains nearly unchanged down to t [Formula: see text] 9.0 nm and decreases to 90 K for t [Formula: see text] 1.2 nm. Our finding thus provides a practical guideline to achieve high crystallinity and low RR in ultra-thin SRO films by simply adjusting the growth of initial SrO layer.

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A stability bound on the [Formula: see text]-linear resistivity of conventional metals.

Publications

A stability bound on the [Formula: see text]-linear resistivity of conventional metals.

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