Searching for d⁰ spintronic materials: bismuthene monolayer doped with IVA-group atoms.

ABSTRACT: Doping with non-metal atoms may endow two-dimensional (2D) materials with feature-rich electronic and magnetic properties to be applied in spintronic devices. In this work, the effects of IVA-group (C, Si, and Ge) atom doping on the structural, electronic and magnetic properties of bismuthene monolayer are investigated by means of first-principles calculations. Pristine monolayer is a direct gap semiconductor with band gap of 0.56 eV, exhibiting Rashba splitting caused by spin-orbit coupling. Regardless doping level, C and Si incorporation leads to the emergence of significant magnetism, which is generated mainly by the dopants as demonstrated by the spin density illustration. Depending on the dopant nature and concentration, either half-metallic or magnetic semiconductor characters can be

SUBMITTER: Nguyen DK 

PROVIDER: S-EPMC9936354 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature