Effects of Channel Length Scaling on the Electrical Characteristics of Multilayer MoS₂ Field Effect Transistor.

ABSTRACT: With the rapid miniaturization of integrated chips in recent decades, aggressive geometric scaling of transistor dimensions to nanometric scales has become imperative. Recent works have reported the usefulness of 2D transition metal dichalcogenides (TMDs) like MoS₂ in MOSFET fabrication due to their enhanced active surface area, thin body, and non-zero bandgap. However, a systematic study on the effects of geometric scaling down to sub-10-nm nodes on the performance of MoS₂ MOSFETs is lacking. Here, the authors present an extensive study on the performance of MoS₂ FETs when geometrically scaled down to the sub-10 nm range. Transport properties are modelled using drift-diffusion equations in the classical regime and self-consistent Schrödinger-Poisson soluti

SUBMITTER: Radhakrishnan S 

PROVIDER: S-EPMC9963916 | biostudies-literature | 2023 Jan

REPOSITORIES: biostudies-literature