Heterovalent-doping-enabled atom-displacement fluctuation leads to ultrahigh energy-storage density in AgNbO₃-based multilayer capacitors.

ABSTRACT: Dielectric capacitors with high energy storage performance are highly desired for next-generation advanced high/pulsed power capacitors that demand miniaturization and integration. However, the poor energy-storage density that results from the low breakdown strength, has been the major challenge for practical applications of dielectric capacitors. Herein, we propose a heterovalent-doping-enabled atom-displacement fluctuation strategy for the design of low-atom-displacements regions in the antiferroelectric matrix to achieve the increase in breakdown strength and enhancement of the energy-storage density for AgNbO₃-based multilayer capacitors. An ultrahigh breakdown strength ~1450 kV·cm^-1 is realized in the Sm_0.05Ag_0.85Nb_0.7Ta_0.3</

SUBMITTER: Zhu LF 

PROVIDER: S-EPMC9978025 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature