Ferroelectric Electroresistance after a Breakdown in Epitaxial Hf_0.5Zr_0.5O₂ Tunnel Junctions.

ABSTRACT: The recent discovery of ferroelectricity in doped HfO₂ has opened perspectives on the development of memristors based on ferroelectric switching, including ferroelectric tunnel junctions. In these devices, conductive channels are formed in a similar manner to junctions based on nonferroelectric oxides. The formation of the conductive channels does not preclude the presence of ferroelectric switching, but little is known about the device ferroelectric properties after conduction path formation or their impact on the electric modulation of the resistance state. Here, we show that ferroelectricity and related sizable electroresistance are observed in pristine 4.6 nm epitaxial Hf_0.5Zr_0.5O₂ (HZO) tunnel junctions grown on Si. After a soft breakdown in

SUBMITTER: Long X 

PROVIDER: S-EPMC9979785 | biostudies-literature | 2023 Feb

REPOSITORIES: biostudies-literature