Sub-bandgap near-infrared photovoltaic response in Au/Al₂O₃/n-Si metal-insulator-semiconductor structure by plasmon-enhanced internal photoemission.

ABSTRACT: Silicon sub-bandgap near-infrared (NIR) (λ > 1100 nm) photovoltaic (PV) response by plasmon-enhanced internal photoemission was investigated. The Si sub-bandgap NIR PV response, which remains unexploited in Schottky junction-like solar cell device, was examined using nanometer sized Au/Al₂O₃/n-Si junction arrays. This kind of metal-insulator-semiconductor structure was similar in functionality to Schottky junction in NIR absorption, photo-induced charge separation and collection. It showed that NIR absorption increased steadily with increasing volume of Au nanoparticles (NPs) till a saturation was reached. Simulation results indicated the formation of localized surface plasmon on the surfaces of Au NPs, which was correlated well with the observed NIR absorption. On th

SUBMITTER: Dai X 

PROVIDER: S-EPMC9992651 | biostudies-literature | 2023 Mar

REPOSITORIES: biostudies-literature