Unknown

Dataset Information

0

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics.

ABSTRACT: A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.

SUBMITTER: Lin YD 

PROVIDER: S-EPMC5469721 | biostudies-other | 2017 Dec

REPOSITORIES: biostudies-other

Json Xml
altmetric image

Publications

Retention Model of TaO/HfO <sub>x</sub> and TaO/AlO <sub>x</sub> RRAM with Self-Rectifying Switch Characteristics.

Lin Yu-De YD   Chen Pang-Shiu PS   Lee Heng-Yuan HY   Chen Yu-Sheng YS   Rahaman Sk Ziaur SZ   Tsai Kan-Hsueh KH   Hsu Chien-Hua CH   Chen Wei-Su WS   Wang Pei-Hua PH   King Ya-Chin YC   Lin Chrong Jung CJ  

Nanoscale research letters 20170613 1

A retention behavior model for self-rectifying TaO/HfO <sub>x</sub> - and TaO/AlO <sub>x</sub> -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO <sub>x</sub> elements are stacked in layers, the LRS retention can be improved. The L  ...[more]