Two-Dimensional Hybrid Composites of SnS2 Nanosheets Array Film with Graphene for Enhanced Photoelectric Performance.
ABSTRACT: Two-dimensional (2D) metal dichalcogenides have attracted considerable attention for use in photoelectric devices due to their unique layer structure and strong light-matter interaction. In this paper, vertically grown SnS2 nanosheets array film was synthesized by a facile chemical bath deposition (CBD). The effects of deposition time and annealing temperature on the quality of SnS2 films was investigated in detail. By optimizing the preparation conditions, the SnS2 array film exhibited efficient photoelectric detection performance under sunlight. Furthermore, in order to improve the performance of the photodetector based on SnS2 nanosheets film, a transparent graphene film was introduced as the hole-transport layer by wet-chemical method directly transferring techniques. Graphene/SnS2 nanosheets array film heterojunction photodetectors exhibit enhanced photoresponsivity. The light on/off ratio of the photodetector based on graphene/SnS2 was 1.53, about 1.4 times higher than that of the pristine SnS2 array films. The improved photoresponse performance suggested that the effective heterojunction between vertical SnS2 nanosheets array film and graphene suppresses the recombination of photogenerated carriers. The results indicate that the graphene/SnS2 heterojunction photodetectors have great potential in photodetection devices.
Project description:High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7?×?10(7) A/W and a fast response speed of 50?ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38-65??A) and response speed (40-60?ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications.
Project description:In this data, the properties of transparent TiO2 film for Schottky photodetector are presented for the research article, entitled as "High-performing transparent photodetectors based on Schottky contacts" (Patel et al., 2017) . The transparent photoelectric device was demonstrated by using various Schottky metals, such as Cu, Mo and Ni. This article mainly shows the optical transmittance of the Ni-transparent Schottky photodetector, analyzed by the energy dispersive spectroscopy and interfacial TEM images for transparency to observe the interface between NiO and TiO2 film. The observation and analyses clearly show that no pinhole formation in the TiO2 film by Ni diffusion. The rapid thermal process is an effective way to form the quality TiO2 film formation without degradation, such as pinholes (Qiu et al., 2015) . This thermal process may apply to form functional metal oxide layers for solar cells and photodetectors.
Project description:The creation of crystal phase heterostructures of transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to the formation of metal/semiconductor junctions with low potential barriers. Very differently, post-transition metal chalcogenides are semiconductors regardless of their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS<sub>2</sub> and 1T-WS<sub>2</sub> induces a charge redistribution in Sn and W to realize metallic Sn<sub>0.5</sub>W<sub>0.5</sub>S<sub>2</sub> nanosheets. These nanosheets are epitaxially deposited on surfaces of semiconducting SnS<sub>2</sub> nanoplates to form vertical heterostructures. The ohmic-like contact formed at the Sn<sub>0.5</sub>W<sub>0.5</sub>S<sub>2</sub>/SnS<sub>2</sub> heterointerface affords rapid transport of charge carriers, and allows for the fabrication of fast photodetectors. Such facile charge transfer, combined with a high surface affinity for acetone molecules, further enables their use as highly selective 100?ppb level acetone sensors. Our work suggests that combining compositional and structural control in solution-phase epitaxy holds promises for solution-processible thin-film optoelectronics and sensors.
Project description:Self-powered photodetectors are expected to play a crucial role in future nano-optoelectronic devices owing to their independent and sustainable operation. Based on the heterojunction between ZnO nanowires (NWs) and shuttle-like SnS, we design a self-powered photodetector exhibiting wide-range photoresponse and tunable spectral selectivity. Differently from conventional devices, a wavelength-induced photocurrent polarity is observed in the ZnO NWs/SnS photodetector, which enables the device to distinguish between photons in the UV and visible (VIS) regions. This is due to switching of the interfacial modulation by the pyroelectric-polarization potential (pyro-potential) inside ZnO NWs and thermoelectric-polarization potential (thermo-potential) inside SnS. A photocurrent enhancement of 125% and improved responsivity of 364 ?A/W are obtained under the pyro-potential upon 690 nm light illumination, whereas reversed responsivity of -155 ?A/W is obtained under the thermo-potential upon 365 nm light illumination. We believe the photocurrent polarity could be useful for improving resolution of dynamic light sensing/imaging.
Project description:Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well.
Project description:Because of their extraordinary physical properties, low-dimensional materials including graphene and gallium selenide (GaSe) are promising for future electronic and optoelectronic applications, particularly in transparent-flexible photodetectors. Currently, the photodetectors working at the near-infrared spectral range are highly indispensable in optical communications. However, the current photodetector architectures are typically complex, and it is normally difficult to control the architecture parameters. Here, we report graphene-GaSe heterojunction-based field-effect transistors with broadband photodetection from 730-1550 nm. Chemical-vapor-deposited graphene was employed as transparent gate and contact electrodes with tunable resistance, which enables effective photocurrent generation in the heterojunctions. The photoresponsivity was shown from 10 to 0.05 mA/W in the near-infrared region under the gate control. To understand behavior of the transistor, we analyzed the results via simulation performed using a model for the gate-tunable graphene-semiconductor heterojunction where possible Fermi level pinning effect is considered.
Project description:The increasing demand for wearable optoelectronics in biomedicine, prosthetics, and soft robotics calls for innovative and transformative technologies that permit facile fabrication of compact and flexible photodetectors with high performance. Herein, by developing a single-step selective laser writing strategy that can finely tailor material properties through incident photon density control and lead to the formation of hierarchical hybrid nanocomposites, e.g., reduced graphene oxide (rGO)-zinc oxide (ZnO), a highly flexible and all rGO-ZnO hybrid-based photodetector is successfully constructed. The device features 3D ultraporous hybrid films with high photoresponsivity as the active detection layer, and hybrid nanoflakes with superior electrical conductivity as interdigitated electrodes. Benefitting from enhanced photocarrier generation because of the ultraporous film morphology, efficient separation of electron-hole pairs at rGO-ZnO heterojunctions, and fast electron transport by highly conductive rGO nanosheets, the photodetector exhibits high, linear, and reproducible responsivities to a wide range of ultraviolet (UV) intensities. Furthermore, the excellent mechanical flexibility and robustness enable the photodetector to be conformally attached to skin, thus intimately monitoring the exposure dosage of human body to UV light for skin disease prevention. This study advances the fabrication of flexible optoelectronic devices with reduced complexity, facilitating the integration of wearable optoelectronics and epidermal systems.
Project description:Photodetectors are a class of critical optoelectronic devices that can transform incident light into a detectable electrical signal. In this work, we develop a novel photodetector based on two-dimensional (2D) confined electron donor-acceptor co-assembled ultrathin films (UTFs). The (PCDTBT@CN-PPV/LDHs) n UTFs are composed of an organic electron donor, poly[N-9'-heptadecanyl-2,7-carbazole-alt-5,5-(4',7'-di-2-thienyl-2',1',3'-benzothiadiazole)] (PCDTBT), and an acceptor, poly(5-(2-ethylhexyloxy)-2-methoxy-cyanoterephthalylidene) (CN-PPV), within inorganic Mg2Al-layered double hydroxides (LDHs). The UTFs exhibit broad-range visible-light absorption, from 400 to 650 nm, resulting from complementary absorption of PCDTBT and CN-PPV. The fluorescence emission of the UTFs is completely quenched, implying the occurrence of photoinduced charge transfer (PCT). As a novel photodetector, the co-assembled UTFs have a high photocurrent and on/off switching ratio (300 nA/?120), in contrast to those of the PCDTBT/CN-PPV drop-casting thin film (5.4 nA/?1.6); a fast response; a short recovery time (lower than 0.1 s); and excellent wavelength and light-intensity dependence. The PCT mechanism can be attributed to the formation of a 2D bulk heterojunction of the two polymers within the interlayers of the LDH nanosheets. Furthermore, flexible UTFs on polyethylene terephthalate substrates are also fabricated, which exhibit excellent folding strength and electrical stability.
Project description:A MoSe2/Si heterojunction photodetector is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV-visible-NIR, high detectivity of 7.13 × 1010 Jones, and ultrafast response speed of ?270 ns, unveiling the great potential for the heterojunction for high-performance optoelectronic devices.
Project description:Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75?A/W (at 580?nm and 3?V bias) with ultra-fast response of 10??sec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50?kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ?1.4?×?1012 Jones (2?V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere.