The Role of GaN in the Heterostructure WS₂/GaN for SERS Applications.

ABSTRACT: In the application of WS₂ as a surface-enhanced Raman scattering (SERS) substrate, enhancing the charge transfer (CT) opportunity between WS₂ and analyte is an important issue for SERS efficiency. In this study, we deposited few-layer WS₂ (2-3 layers) on GaN and sapphire substrates with different bandgap characteristics to form heterojunctions using a chemical vapor deposition. Compared with sapphire, we found that using GaN as a substrate for WS₂ can effectively enhance the SERS signal, with an enhancement factor of 6.45 × 10⁴ and a limit of detection of 5 × 10^-6 M for probe molecule Rhodamine 6G according to SERS measurement. Analysis of Raman, Raman mapping, atomic force microscopy, and SERS mechanism revealed that The SE

SUBMITTER: Ko TS 

PROVIDER: S-EPMC10143599 | biostudies-literature | 2023 Apr

REPOSITORIES: biostudies-literature