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Reduced electron relaxation time of perovskite films via g-C₃N₄ quantum dot doping for high-performance perovskite solar cells.

ABSTRACT: Perovskite film-quality is a crucial factor to improve the photovoltaic properties of perovskite solar cells, which is closely related to the morphology of crystallization grain size of the perovskite layer. However, defects and trap sites are inevitably generated on the surface and at the grain boundaries of the perovskite layer. Here, we report a convenient method for preparing dense and uniform perovskite films, employing g-C₃N₄ quantum dots doped into the perovskite layer by regulating proper proportions. This process produces perovskite films with dense microstructures and flat surfaces. As a result, the higher fill factor (0.78) and a power conversion efficiency of 20.02% are obtained by the defect passivation of g-C₃N₄QDs.

SUBMITTER: Jiang LL

PROVIDER: S-EPMC10242296 | biostudies-literature | 2023 Jun

REPOSITORIES: biostudies-literature

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Reduced electron relaxation time of perovskite films via g-C3N4 quantum dot doping for high-performance perovskite solar cells.

Jiang Lu-Lu LL Chen Meng-Meng MM Tang Xiao-Dan XD Tang Ying Y Li Shao-Jie SJ Li Ying Y Li Hang-Hui HH Liu Hai-Rui HR

RSC advances 20230606 25

Perovskite film-quality is a crucial factor to improve the photovoltaic properties of perovskite solar cells, which is closely related to the morphology of crystallization grain size of the perovskite layer. However, defects and trap sites are inevitably generated on the surface and at the grain boundaries of the perovskite layer. Here, we report a convenient method for preparing dense and uniform perovskite films, employing g-C3N4 quantum dots doped into the perovskite lay ...[more]

PMID: 37288376

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