Unknown

Dataset Information

0

ALD-grown two-dimensional TiSx metal contacts for MoS2 field-effect transistors.


ABSTRACT: Metal contacts to MoS2 field-effect transistors (FETs) play a determinant role in the device electrical characteristics and need to be chosen carefully. Because of the Schottky barrier (SB) and the Fermi level pinning (FLP) effects that occur at the contact/MoS2 interface, MoS2 FETs often suffer from high contact resistance (Rc). One way to overcome this issue is to replace the conventional 3D bulk metal contacts with 2D counterparts. Herein, we investigate 2D metallic TiSx (x ∼ 1.8) as top contacts for MoS2 FETs. We employ atomic layer deposition (ALD) for the synthesis of both the MoS2 channels as well as the TiSx contacts and assess the electrical performance of the fabricated devices. Various thicknesses of TiSx are grown on MoS2, and the resultant devices are electrically compared to the ones with the conventional Ti metal contacts. Our findings show that the replacement of 5 nm Ti bulk contacts with only ∼1.2 nm of 2D TiSx is beneficial in improving the overall device metrics. With such ultrathin TiSx contacts, the ON-state current (ION) triples and increases to ∼35 μA μm-1. Rc also reduces by a factor of four and reaches ∼5 MΩ μm. Such performance enhancements were observed despite the SB formed at the TiSx/MoS2 interface is believed to be higher than the SB formed at the Ti/MoS2 interface. These device metric improvements could therefore be mainly associated with an increased level of electrostatic doping in MoS2, as a result of using 2D TiSx for contacting the 2D MoS2. Our findings are also well supported by TCAD device simulations.

SUBMITTER: Mahlouji R 

PROVIDER: S-EPMC10496909 | biostudies-literature | 2023 Sep

REPOSITORIES: biostudies-literature

altmetric image

Publications

ALD-grown two-dimensional TiS<sub><i>x</i></sub> metal contacts for MoS<sub>2</sub> field-effect transistors.

Mahlouji Reyhaneh R   Kessels Wilhelmus M M Erwin WMME   Sagade Abhay A AA   Bol Ageeth A AA  

Nanoscale advances 20230815 18


Metal contacts to MoS<sub>2</sub> field-effect transistors (FETs) play a determinant role in the device electrical characteristics and need to be chosen carefully. Because of the Schottky barrier (SB) and the Fermi level pinning (FLP) effects that occur at the contact/MoS<sub>2</sub> interface, MoS<sub>2</sub> FETs often suffer from high contact resistance (<i>R</i><sub>c</sub>). One way to overcome this issue is to replace the conventional 3D bulk metal contacts with 2D counterparts. Herein, we  ...[more]

Similar Datasets

| S-EPMC10018648 | biostudies-literature
| S-EPMC9251734 | biostudies-literature
| S-EPMC10103745 | biostudies-literature
| S-EPMC10246652 | biostudies-literature