Selective Laser-Assisted Direct Synthesis of MoS₂ for Graphene/MoS₂ Schottky Junction.

ABSTRACT: Implementing a heterostructure by vertically stacking two-dimensional semiconductors is necessary for responding to various requirements in the future of semiconductor technology. However, the chemical-vapor deposition method, which is an existing two-dimensional (2D) material-processing method, inevitably causes heat damage to surrounding materials essential for functionality because of its high synthesis temperature. Therefore, the heterojunction of a 2D material that directly synthesized MoS₂ on graphene using a laser-based photothermal reaction at room temperature was studied. The key to the photothermal-reaction mechanism is the difference in the photothermal absorption coefficients of the materials. The device in which graphene and MoS₂ were vertically stacked u

SUBMITTER: Jeon MJ 

PROVIDER: S-EPMC10674199 | biostudies-literature | 2023 Nov

REPOSITORIES: biostudies-literature