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Electrostatic Gating of Phosphorene Polymorphs.


ABSTRACT: The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pristine and carbon-doped monolayer (bilayer) phosphorene allotropes. The remarkable flexibility of phosphorene allotropes, arising from intra- and interlayer van der Waals interactions, causes a good resilience up to equivalent gate potential of two electrons per unit cell. The resilience depends on the stacking details in such a way that rotated bilayers show considerably higher thermodynamical stability than the unrotated ones, even at a high gate potential. In addition, a semiconductor to metal phase transition is observed in some of the rotated and carbon-doped structures with increased electronic transport relative to graphene in the context of real space Green's function formalism.

SUBMITTER: Malayee FM 

PROVIDER: S-EPMC10895923 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature

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Electrostatic Gating of Phosphorene Polymorphs.

Malayee Fereshteh Mahmoodpouri FM   Bagheri Robabeh R   Nazari Fariba F   Illas Francesc F  

The journal of physical chemistry. C, Nanomaterials and interfaces 20240209 7


The ability to directly monitor the states of electrons in modern field-effect transistors (FETs) could transform our understanding of the physics and improve the function of related devices. In particular, phosphorene allotropes present a fertile landscape for the development of high-performance FETs. Using density functional theory-based methods, we have systematically investigated the influence of electrostatic gating on the structures, stabilities, and fundamental electronic properties of pr  ...[more]

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