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Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu2I3 Microwire Arrays.


ABSTRACT: The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu2I3 microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233 mA/W to 355 nm radiation. Notably, at 0 V bias, the asymmetric device produces an open-circuit voltage of 356 mV and drives to a short-circuit current of 372 pA; meanwhile, the switch ratio (Iph/Idark) reaches up to 103, indicating its excellent potential for detecting weak light. Furthermore, the device maintains stable responses throughout 10000 UV-light switch cycles, with negligible degradation even after 90-day storage in air. Our work establishes that CsCu2I3 is a good candidate for self-powered UV detection and thoroughly demonstrates its potential as a passive device.

SUBMITTER: Zhang ZH 

PROVIDER: S-EPMC10910456 | biostudies-literature | 2024 Feb

REPOSITORIES: biostudies-literature

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Air-Stable Self-Driven UV Photodetectors on Controllable Lead-Free CsCu<sub>2</sub>I<sub>3</sub> Microwire Arrays.

Zhang Zhi-Hong ZH   Yan Shan-Shan SS   Chen Yu-Long YL   Lian Zhen-Dong ZD   Fu Ai A   Kong You-Chao YC   Li Lin L   Su Shi-Chen SC   Ng Kar-Wei KW   Wei Zhi-Peng ZP   Liu Hong-Chao HC   Wang Shuang-Peng SP  

ACS applied materials & interfaces 20240221 8


The rapid evolution of the Internet of Things has engendered increased requirements for low-cost, self-powered UV photodetectors. Herein, high-performance self-driven UV photodetectors are fabricated by designing asymmetric metal-semiconductor-metal structures on the high-quality large-area CsCu<sub>2</sub>I<sub>3</sub> microwire arrays. The asymmetrical depletion region doubles the photocurrent and response speed compared to the symmetric structure device, leading to a high responsivity of 233  ...[more]

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