Area-selective atomic layer deposition on 2D monolayer lateral superlattices.

ABSTRACT: The advanced patterning process is the basis of integration technology to realize the development of next-generation high-speed, low-power consumption devices. Recently, area-selective atomic layer deposition (AS-ALD), which allows the direct deposition of target materials on the desired area using a deposition barrier, has emerged as an alternative patterning process. However, the AS-ALD process remains challenging to use for the improvement of patterning resolution and selectivity. In this study, we report a superlattice-based AS-ALD (SAS-ALD) process using a two-dimensional (2D) MoS₂-MoSe₂ lateral superlattice as a pre-defining template. We achieved a minimum half pitch size of a sub-10 nm scale for the resulting AS-ALD on the 2D superlattice template by controllin

SUBMITTER: Park J 

PROVIDER: S-EPMC10924103 | biostudies-literature | 2024 Mar

REPOSITORIES: biostudies-literature