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GaN Surface Passivation by MoS₂ Coating.

ABSTRACT: In this study, we investigate the impact of two-dimensional MoS₂ coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS₂ coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS₂, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QWs and suppresses spatially localized intrinsic surface states. This finding provides novel pathways for efficient III-nitride surface passivation.

SUBMITTER: Chen D

PROVIDER: S-EPMC11342355 | biostudies-literature | 2024 Aug

REPOSITORIES: biostudies-literature

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GaN Surface Passivation by MoS2 Coating.

Chen Danxuan D Jiang Jin J Weatherley Thomas F K TFK Carlin Jean-François JF Banerjee Mitali M Grandjean Nicolas N

Nano letters 20240812 33

In this study, we investigate the impact of two-dimensional MoS2 coating on the optical properties of surface GaN/AlGaN quantum wells (QWs). A strong enhancement in GaN QW light emission is observed with monolayer-MoS2 coating, yielding luminescence intensity comparable to that from a QW capped by an AlGaN barrier. Our results demonstrate that MoS2, despite its quite different nature from III-nitride semiconductors, acts as an effective barrier for surface GaN QW ...[more]

PMID: 39132976

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