Project description:Photonic-integrated circuits (PICs) using ferroelectric materials are expected to be used in many applications because of its unique optical properties such as large electro-optic coefficients. In this study, a novel PIC based on a ferroelectric thin-film platform was designed and fabricated, where high-speed optical modulator, spot-size converters (SSCs), and a variable optical attenuator (VOA) were successfully integrated. A ferroelectric lanthanum-modified lead zirconate titanate (PLZT) thin film was epitaxially-grown by using a modified sol-gel method, and it exhibits large electro-optic coefficients (>120 pm/V) and low propagation loss (1.1 dB/cm). The optical modulator, a Mach-Zehnder type, exhibited a half-wave voltage (Vπ) of 6.0 V (VπL = 4.5 Vcm) and optical modulation up to 56 Gb/s. Also, the VOA (with attenuation range of more than 26 dB) was successfully integrated with the modulator. As a result, it is concluded that the developed ferroelectric platform can pave the way for photonic integration.
Project description:Ferroelectric thin-films are highly desirable for their applications on energy conversion, data storage and so on. Molecular ferroelectrics had been expected to be a better candidate compared to conventional ferroelectric ceramics, due to its simple and low-cost film-processability. However, most molecular ferroelectrics are mono-polar-axial, and the polar axes of the entire thin-film must be well oriented to a specific direction to realize the macroscopic ferroelectricity. To align the polar axes, an orientation-controlled single-crystalline thin-film growth method must be employed, which is complicated, high-cost and is extremely substrate-dependent. In this work, we discover a new molecular ferroelectric of quinuclidinium periodate, which possesses six-fold rotational polar axes. The multi-axes nature allows the thin-film of quinuclidinium periodate to be simply prepared on various substrates including flexible polymer, transparent glasses and amorphous metal plates, without considering the crystallinity and crystal orientation. With those benefits and excellent ferroelectric properties, quinuclidinium periodate shows great potential in applications like wearable devices, flexible materials, bio-machines and so on.
Project description:Molecular ferroelectrics have garnered significant attention due to their structural tunability, low synthesis temperature, and high flexibility. Herein, we successfully synthesized imidazole perchlorate (ImClO4) single crystals and high-quality, highly-oriented thin films on Si substrates. These films demonstrated a high inverse piezoelectric coefficient of 55.7 pm/V. Two types of domain bands were observed: type-I bands tilted ~60° relative to the horizontal axis, and type-II bands positioned perpendicular to the horizontal axis. Under a + 20 V bias, type-I bands showed a reduction and detachment of 180° domain walls to form a needle-like domain. It extended toward the band boundary after applying -20 V bias, which grew along the boundary upon contact. In contrast, type-II bands showed straight domain wall motion and displayed a higher piezoresponse than type-I bands. The growth of high quality molecular ferroelectric thin films on Si substrates paves the way for the development of on-chip devices.
Project description:Chromium nitride (CrN) spurred enormous interest due to its coupled magnetostructural and unique metal-insulator transition. The underneath electronic structure of CrN remains elusive. Herein, the electronic structure of epitaxial CrN thin film has been explored by employing resonant photoemission spectroscopy (RPES) and X-ray absorption near edge spectroscopy study in combination with the first-principles calculations. The RPES study indicates the presence of a charge-transfer screened 3[Formula: see text] ([Formula: see text]: hole in the N-2[Formula: see text]) and 3[Formula: see text] final-states in the valence band regime. The combined experimental electronic structure along with the orbital resolved electronic density of states from the first-principles calculations reveals the presence of Cr(3[Formula: see text])-N(2[Formula: see text]) hybridized (3[Formula: see text]) states between lower Hubbard (3[Formula: see text]) and upper Hubbard (3[Formula: see text]) bands with onsite Coulomb repulsion energy (U) and charge-transfer energy ([Formula: see text]) estimated as [Formula: see text] 4.5 and 3.6 eV, respectively. It verifies the participation of ligand (N-2[Formula: see text]) states in low energy charge fluctuations and provides concrete evidence for the charge-transfer ([Formula: see text]U) insulating nature of CrN thin film.
Project description:In this paper, we present a broadband microwave characterization of ferroelectric hafnium zirconium oxide (Hf0.5Zr0.5O2) metal-ferroelectric-metal (MFM) thin film varactor from 1 kHz up to 0.11 THz. The varactor is integrated into the back-end-of-line (BEoL) of 180 nm CMOS technology as a shunting capacitor for the coplanar waveguide (CPW) transmission line. At low frequencies, the varactor shows a slight imprint behavior, with a maximum tunability of 15% after the wake-up. In the radio- and mmWave frequency range, the varactor's maximum tunability decreases slightly from 13% at 30 MHz to 10% at 110 GHz. Ferroelectric varactors were known for their frequency-independent, linear tunability as well as low loss. However, this potential was never fully realized due to limitations in integration. Here, we show that ferroelectric HfO2 thin films with good back-end-of-line compatibility support very large scale integration. This opens up a broad range of possible applications in the mmWave and THz frequency range such as 6G communications, imaging radar, or THz imaging.
Project description:Microwave photonics, with its advanced high-frequency signal processing capabilities, is expected to play a crucial role in next-generation wireless communications and radar systems. The realization of highly integrated, high-performance, and multifunctional microwave photonic links will pave the way for its widespread deployment in practical applications, which is a significant challenge. Here, leveraging thin-film lithium niobate intensity modulator and programmable cascaded microring resonators, we demonstrate a tunable microwave photonic notch filter that simultaneously achieves high level of integration along with high dynamic range, high link gain, low noise figure, and ultra-high rejection ratio. Additionally, this programmable on-chip system is multifunctional, allowing for the dual-band notch filter and the suppression of the high-power interference signal. This work demonstrates the potential applications of the thin-film lithium niobate platform in the field of high-performance integrated microwave photonic filtering and signal processing, facilitating the advancement of microwave photonic system towards practical applications.
Project description:The development of all-in-one devices for artificial visual systems offers an attractive solution in terms of energy efficiency and real-time processing speed. In recent years, the proliferation of smart sensors in the growth of Internet-of-Things (IoT) has led to the increasing importance of in-sensor computing technology, which places computational power at the edge of the data-flow architecture. In this study, a prototype visual sensor inspired by the human retina is proposed, which integrates ferroelectricity and photosensitivity in two-dimensional (2D) α-In2Se3 material. This device mimics the functions of photoreceptors and amacrine cells in the retina, performing optical reception and memory computation functions through the use of electrical switching polarization in the channel. The gate-tunable linearity of excitatory and inhibitory functions in photon-induced short-term plasticity enables to encode and classify 12 000 images in the Mixed National Institute of Standards and Technology (MNIST) dataset with remarkable accuracy, achieving ≈94%. Additionally, in-sensor convolution image processing through a network of phototransistors, with five convolutional kernels electrically pre-programmed into the transistors is demonstrated. The convoluted photocurrent matrices undergo straightforward arithmetic calculations to produce edge and feature-enhanced scenarios. The findings demonstrate the potential of ferroelectric α-In2Se3 for highly compact and efficient retinomorphic hardware implementation, regardless of ambipolar transport in the channel.
Project description:The high operating voltage is a primary issue preventing the commercial application of the ferroelectric organic field-effect transistor (Fe-OFET) nonvolatile memory (NVM). In this work, we propose a novel route to resolve this issue by employing two ultrathin AlOX interfacial layers sandwiching an ultrathin ferroelectric polymer film with a low coercive field, in the fabricated flexible Fe-OFET NVM. The operation voltage of Fe-OFET NVMs decreases with the downscaling thickness of the ferroelectric film. By inserting two ultrathin AlOX interfacial layers at both sides of the ultrathin ferroelectric film, not only the gate leakage is prominently depressed but also the mobility is greatly improved. Excellent memory performances, with large mobility of 1.7 ~ 3.3 cm2 V-1 s-1, high reliable memory switching endurance over 2700 cycles, high stable data storage retention capability over 8 × 104 s with memory on-off ratio larger than 102, are achieved at the low operating voltage of 4 V, which is the lowest value reported to data for all Fe-OFET NVMs. Simultaneously, outstanding mechanical fatigue property with the memory performances maintaining well over 7500 bending cycles at a bending radius of 5.5 mm is also achieved in our flexible FE-OFET NVM.
Project description:We describe the design and fabrication of miniaturized origami structures based on thin-film shape memory alloys. These devices are attractive for medical implants, as they overcome the opposing requirements of crimping the implant for insertion into an artery while keeping sensitive parts of the implant nearly stress-free. The designs are based on a group theory approach in which compatibility at a few creases implies the foldability of the whole structure. Importantly, this approach is versatile and thus provides a pathway for patient-specific treatment of brain aneurysms of differing shapes and sizes. The wafer-based monolithic fabrication method demonstrated here, which comprises thin-film deposition, lithography, and etching using sacrificial layers, is a prerequisite for any integrated self-folding mechanism or sensors and will revolutionize the availability of miniaturized implants, allowing for new and safer medical treatments.
Project description:Large dielectric constants and small remanent polarization of the relaxor-ferroelectric (RFE) polymers are favored for energy-harvesting applications. Here, the energy harvesting of RFE thin films of vinylidene fluoride (VDF)-based terpolymers were re-evaluated. VDF-based terpolymers with trifluoroethylene (TrFE) and chlorofluoroethylene (CFE), CFE terpolymer, and those with TrFE and chlorotrifluoroethylene were used. Thermally annealed CFE terpolymer exhibited an energy density of 8.3 J cm-3 and an energy efficiency of 82% at a field of 280 MV m-1. The high-energy efficiency was related to the narrow bipolar hysteresis of displacement (D)-electric field (E) of the CFE terpolymer film. This narrow D-E hysteresis was a sum of the unipolar hysteresis directed toward the positive electric field region and that toward the negative electric field region, which suggested antiferroelectric-like behavior.