Chemical Vapor Deposition of Monolayer Graphene on Centimeter-Sized Cu(111) for Nanoelectronics Applications.

ABSTRACT: We report a fast and straightforward preparation of centimeter-sized Cu(111) from polycrystalline Cu foil by the strain-free abnormal grain growth method and the subsequent growth of monolayer graphene by chemical vapor deposition (CVD). The fabrication of Cu(111) and graphene was streamlined into a straightforward process using a CVD system consisting of a tube furnace and a quartz boat. It was found that the annealing temperature and time are critical in the growth of Cu(111). Heating at 1060 °C for 3 h led to the conversion of polycrystalline Cu to Cu(111), yielding large grains and high-quality monolayer graphene. Molecular dynamics (MD) simulations supported the experimental findings, demonstrating that annealing leads to increased mobility of Cu grain boundaries. MD simulations furth

SUBMITTER: Tu J 

PROVIDER: S-EPMC11894592 | biostudies-literature | 2025 Mar

REPOSITORIES: biostudies-literature