A 100 Gb s^-1 quantum-confined Stark effect modulator monolithically integrated with silicon nitride on Si.

ABSTRACT: The exponential growth of data-intensive artificial intelligence necessitates ultra-fast and energy efficient transceivers in data centres. Quantum-confined Stark effect (QCSE) modulators offer promising solutions, combining high-speed modulation with minimal footprint and superior energy efficiency. Here, we demonstrate a monolithically integrated O-band Ge/SiGe QCSE modulator operating at 100 Gb s^-1, seamlessly integrated with silicon nitride (SiN) waveguides on both silicon and silicon-on-insulator substrates. Our modulator achieves <1 dB coupling loss,  <63 fJ bit^-1 energy consumption, and  >5 dB static extinction ratio, while maintaining performance across a 20-80 °C temperature range. Leveraging CMOS-compatible fabrication processes, we incorporate multiple quan

SUBMITTER: Skandalos I 

PROVIDER: S-EPMC12046052 | biostudies-literature | 2025 May

REPOSITORIES: biostudies-literature