Bimodal Spin Switch Emerging from Hybridized 2D MoS₂/Ferromagnet Interfaces.

ABSTRACT: Over the past decade, MRAMs developments have focused on improving magnetic tunnel junctions while using magnetic electrodes with fixed properties as spin sources. Interestingly, 2D semiconductors offer interface tailoring opportunities for spin valve devices, with many atomically thin materials now available. However, integrating them with oxidation-prone spintronics materials remains a challenge. Here, spin devices are fabricated and evaluated with large-scale MoS₂ directly grown on a monocrystalline ferromagnetic spin source. While most spin transport experiments with 2D semiconductors focus on their isolated dielectric properties, the presented approach unlocks an additional spin manipulation opportunity from MoS₂ hybridization with ferromagnetic electrodes. The e

SUBMITTER: Wei H 

PROVIDER: S-EPMC12464658 | biostudies-literature | 2025 Sep

REPOSITORIES: biostudies-literature