Observation of Interlayer Excitons in Mixed-Dimensional MoS₂ and InGaN/GaN Quantum Well Heterojunctions.

ABSTRACT: Mixed-dimensional heterojunctions (HJs) between compound semiconductors and transition metal dichalcogenides (TMDCs) provide a versatile platform for modulating interfacial exciton dynamics. While compound semiconductors offer precise compositional control for bandgap tuning across wide spectral ranges, they exhibit weak exciton binding energies that limit exciton stability at room temperature. Mixed-dimensional HJs address this limitation by integrating compound semiconductors with TMDCs, whose strong quantum confinement and reduced dielectric screening enable the formation of stable interlayer excitons with enhanced light-matter coupling. Here, we demonstrate a mixed-dimensional heterojunction comprising trilayer MoS₂ interfaced with an Al₂O₃/InGaN/GaN si

SUBMITTER: Kim DW 

PROVIDER: S-EPMC12723632 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature