Subthreshold Schottky-barrier transistor based on monolayer molybdenum disulfide.

ABSTRACT: While the internet of things (IoT) enhances global connectivity through trillions of sensors, the sensory signals are weak and require precise amplification and rapid transmission via thin-film transistor (TFT) interfaces, which must uphold high voltage gain and wide operating frequency range. In this work, we demonstrate a source-gated transistor (SGT) architecture integrating chemical vapor deposition (CVD)-grown monolayer MoS₂ with thin high-k dielectrics. This transistor achieves subthreshold operation with high intrinsic gain and wide operating frequency range, even at an 80 nm channel-length (L_CH). The optimization of output resistance, transconductance and subthreshold swing yields an SGT intrinsic gain exceeding 2.4×10³, with no degradation as L_CH scales from 1000 nm down to 80 nm. Additionally, benefitting from the ultra-short 80 nm L_CH, microwave measurements show a high cut-off frequency of 208 MHz in the subthreshold regime. A monolithically integrated common-source amplifier operating in the subthreshold regime exhibits a high gain of 249 V/V at low supply voltage (0.5 V) and ultra-low power ( ~ 0.17 nW), indicating a promising path toward a universal high-performance transistor solution for high gain, high frequency, and ultra-low power applications.

SUBMITTER: Liu M 

PROVIDER: S-EPMC12820094 | biostudies-literature | 2025 Dec

REPOSITORIES: biostudies-literature