Integration of Freestanding High-k Oxide Membranes for 2D Ferroelectric Field-Effect Transistors.

ABSTRACT: Ferroelectric field-effect transistors (FeFETs) based on oxides with exceptional dielectric and ferroelectric properties offer compelling prospects for energy-efficient logic, nonvolatile memory, and neuromorphic computing. However, integrating high-k ferroelectrics like BaTiO₃ (BTO) with semiconductor channels remains challenging due to epitaxial growth constraints and poor complementary metal-oxide-semiconductor (CMOS) compatibility. Freestanding ferroelectric membranes offer a promising route for van der Waals (vdW) integration, yet practical implementation is impeded by issues such as mechanical deformation during transfer and defect-induced leakage. Here, a defect-tolerant strategy for top-gate integration of freestanding BTO membranes with MoS₂ channels is prese

SUBMITTER: Guo Z 

PROVIDER: S-EPMC12948196 | biostudies-literature | 2026 Feb

REPOSITORIES: biostudies-literature