Nanocontact Disorder in Nanoelectronics for Modulation of Light and Gas Sensitivities.

ABSTRACT: To fabricate reliable nanoelectronics, whether by top-down or bottom-up processes, it is necessary to study the electrical properties of nanocontacts. The effect of nanocontact disorder on device properties has been discussed but not quantitatively studied. Here, by carefully analyzing the temperature dependence of device electrical characteristics and by inspecting them with a microscope, we investigated the Schottky contact and Mott's variable-range-hopping resistances connected in parallel in the nanocontact. To interpret these parallel resistances, we proposed a model of Ti/TiOx in the interface between the metal electrodes and nanowires. The hopping resistance as well as the nanocontact disorder dominated the total device resistance for high-resistance devices, especially at low tempe

SUBMITTER: Lin YF 

PROVIDER: S-EPMC4531317 | biostudies-literature | 2015 Aug

REPOSITORIES: biostudies-literature