Chemical Visualization of a GaN p-n junction by XPS.

ABSTRACT: We report on an operando XPS investigation of a GaN diode, by recording the Ga2p3/2 peak position under both forward and reverse bias. Areal maps of the peak positions under reverse bias are completely decoupled with respect to doped regions and allow a novel chemical visualization of the p-n junction in a 2-D fashion. Other electrical properties of the device, such as leakage current, resistivity of the domains are also tapped via recording line-scan spectra. Application of a triangular voltage excitation enables probing photoresponse of the device.

SUBMITTER: Caliskan D 

PROVIDER: S-EPMC4566124 | biostudies-literature | 2015 Sep

REPOSITORIES: biostudies-literature