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Enhanced electronic-transport modulation in single-crystalline VO2 nanowire-based solid-state field-effect transistors.

ABSTRACT: Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO2 nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of metallic nano-domains in an insulating matrix by applying gate biases near the metal-insulator transition temperature. Our results offer an understanding of the innate ability of coexistence state of metallic and insulating domains in correlated materials through carrier tuning and serve as a valuable reference for further research into the development of correlated materials and their devices.

SUBMITTER: Wei T 

PROVIDER: S-EPMC5722937 | biostudies-literature | 2017 Dec

REPOSITORIES: biostudies-literature

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Enhanced electronic-transport modulation in single-crystalline VO<sub>2</sub> nanowire-based solid-state field-effect transistors.

Wei Tingting T   Kanki Teruo T   Chikanari Masashi M   Uemura Takafumi T   Sekitani Tsuyoshi T   Tanaka Hidekazu H  

Scientific reports 20171208 1

Field-effect transistors using correlated electron materials with an electronic phase transition pave a new avenue to realize steep slope switching, to overcome device size limitations and to investigate fundamental science. Here, we present a new finding in gate-bias-induced electronic transport switching in a correlated electron material, i.e., a VO<sub>2</sub> nanowire channel through a hybrid gate, which showed an enhancement in the resistive modulation efficiency accompanied by expansion of  ...[more]

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