Deep level transient spectroscopic investigation of phosphorus-doped silicon by self-assembled molecular monolayers.

ABSTRACT: It is known that self-assembled molecular monolayer doping technique has the advantages of forming ultra-shallow junctions and introducing minimal defects in semiconductors. In this paper, we report however the formation of carbon-related defects in the molecular monolayer-doped silicon as detected by deep-level transient spectroscopy and low-temperature Hall measurements. The molecular monolayer doping process is performed by modifying silicon substrate with phosphorus-containing molecules and annealing at high temperature. The subsequent rapid thermal annealing drives phosphorus dopants along with carbon contaminants into the silicon substrate, resulting in a dramatic decrease of sheet resistance for the intrinsic silicon substrate. Low-temperature Hall measurements and secondary ion mas

SUBMITTER: Gao X 

PROVIDER: S-EPMC5760684 | biostudies-literature | 2018 Jan

REPOSITORIES: biostudies-literature