Controllable Vapor Growth of Large-Area Aligned CdS _x Se_1-x Nanowires for Visible Range Integratable Photodetectors.

ABSTRACT: The controllable growth of large area band gap engineered-semiconductor nanowires (NWs) with precise orientation and position is of immense significance in the development of integrated optoelectronic devices. In this study, we have achieved large area in-plane-aligned CdS _x Se_1-x nanowires via chemical vapor deposition method. The orientation and position of the alloyed CdS _x Se_1-x NWs could be controlled well by the graphoepitaxial effect and the patterns of Au catalyst. Microstructure characterizations of these as-grown samples reveal that the aligned CdS _x Se_1-x NWs possess smooth surface and uniform diameter. The aligned CdS _x Se_1-x NWs have s

SUBMITTER: Shoaib M 

PROVIDER: S-EPMC6199103 | biostudies-literature | 2018

REPOSITORIES: biostudies-literature