Oxygen Recombination Probability Data for Plasma-Assisted Atomic Layer Deposition of SiO₂ and TiO₂.

ABSTRACT: Atomic layer deposition (ALD) can provide nanometer-thin films with excellent conformality on demanding three-dimensional (3D) substrates. This also holds for plasma-assisted ALD, provided that the loss of reactive radicals through surface recombination is sufficiently low. In this work, we determine the surface recombination probability r of oxygen radicals during plasma ALD of SiO₂ and TiO₂ for substrate temperatures from 100 to ∼240 °C and plasma pressures from 12 to 130 mTorr (for SiO₂). For both processes, the determined values of r are very low, i.e., ∼10^-4 or lower, and decrease with temperature and pressure down to ∼10^-5 within the studied ranges. Accordingly, deposition on trench structures with aspect ratios (AR

SUBMITTER: Arts K 

PROVIDER: S-EPMC8162759 | biostudies-literature | 2021 Apr

REPOSITORIES: biostudies-literature