Engineered tunneling layer with enhanced impact ionization for detection improvement in graphene/silicon heterojunction photodetectors.

ABSTRACT: Here, an engineered tunneling layer enhanced photocurrent multiplication through the impact ionization effect was proposed and experimentally demonstrated on the graphene/silicon heterojunction photodetectors. With considering the suitable band structure of the insulation material and their special defect states, an atomic layer deposition (ALD) prepared wide-bandgap insulating (WBI) layer of AlN was introduced into the interface of graphene/silicon heterojunction. The promoted tunneling process from this designed structure demonstrated that can effectively help the impact ionization with photogain not only for the regular minority carriers from silicon, but also for the novel hot carries from graphene. As a result, significantly enhanced photocurrent as well as simultaneously decreased da

SUBMITTER: Yin J 

PROVIDER: S-EPMC8167175 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature