Ontology highlight
ABSTRACT:
SUBMITTER: Zhang F
PROVIDER: S-EPMC8289170 | biostudies-literature | 2021 Jun
REPOSITORIES: biostudies-literature
Zhang Fengyuan F Fan Hua H Han Bing B Zhu Yudong Y Deng Xiong X Edwards David D Kumar Amit A Chen Deyang D Gao Xingsen X Fan Zhen Z Rodriguez Brian J BJ
ACS applied materials & interfaces 20210526 22
When scaling the lateral size of a ferroelectric random access memory (FeRAM) device down to the nanometer range, the polarization switching-induced displacement current becomes small and challenging to detect, which greatly limits the storage density of FeRAM. Here, we report the observation of significantly enhanced injection currents, much larger than typical switching currents, induced by polarization switching in BiFeO<sub>3</sub> thin films via conductive atomic force microscopy. Interesti ...[more]