Wafer-scale transfer route for top-down III-nitride nanowire LED arrays based on the femtosecond laser lift-off technique.

ABSTRACT: The integration of gallium nitride (GaN) nanowire light-emitting diodes (nanoLEDs) on flexible substrates offers opportunities for applications beyond rigid solid-state lighting (e.g., for wearable optoelectronics and bendable inorganic displays). Here, we report on a fast physical transfer route based on femtosecond laser lift-off (fs-LLO) to realize wafer-scale top-down GaN nanoLED arrays on unconventional platforms. Combined with photolithography and hybrid etching processes, we successfully transferred GaN blue nanoLEDs from a full two-inch sapphire substrate onto a flexible copper (Cu) foil with a high nanowire density (~10⁷ wires/cm²), transfer yield (~99.5%), and reproducibility. Various nanoanalytical measurements were conducted to evaluate the performa

SUBMITTER: Yulianto N 

PROVIDER: S-EPMC8433433 | biostudies-literature | 2021

REPOSITORIES: biostudies-literature