Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention.
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ABSTRACT:
SUBMITTER: Zhang Y
PROVIDER: S-EPMC8442916 | biostudies-literature | 2021 Sep
REPOSITORIES: biostudies-literature
Publications
Three-dimensional perovskite nanowire array-based ultrafast resistive RAM with ultralong data retention.
Zhang Yuting Y Poddar Swapnadeep S Huang He H Gu Leilei L Zhang Qianpeng Q Zhou Yu Y Yan Shuai S Zhang Sifan S Song Zhitang Z Huang Baoling B Shen Guozhen G Fan Zhiyong Z
Science advances 20210903 36
Resistive random access memories (Re-RAMs) have transpired as a foremost candidate among emerging nonvolatile memory technologies with a potential to bridge the gap between the traditional volatile and fast dynamic RAMs and the nonvolatile and slow FLASH memories. Here, we report electrochemical metallization (ECM) Re-RAMs based on high-density three-dimensional halide perovskite nanowires (NWs) array as the switching layer clubbed between silver and aluminum contacts. NW Re-RAMs made of three t ...[more]
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