Atomic-scale fatigue mechanism of ferroelectric tunnel junctions.

ABSTRACT: Ferroelectric tunnel junctions (FTJs) are promising candidates for next-generation memories due to fast read/write speeds and low-power consumptions. Here, we investigate resistance fatigue of FTJs, which is performed on Pt/BaTiO₃/Nb:SrTiO₃ devices. By direct observations of the 5–unit cell–thick BaTiO₃ barrier with high-angle annular dark-field imaging and electron energy loss spectroscopy, oxygen vacancies are found to aggregate at the Pt/BaTiO₃ interface during repetitive switching, leading to a ferroelectric dead layer preventing domain nucleation and growth. Severe oxygen deficiency also makes BaTiO₃ lattices energetically unfavorable and lastly induces a destruction of local perovskite structure of the barrier. Ferroelectric prop

SUBMITTER: Yang Y 

PROVIDER: S-EPMC8612688 | biostudies-literature | 2021 Nov

REPOSITORIES: biostudies-literature