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Thickness-Dependent Structural and Electrical Properties of WS₂ Nanosheets Obtained via the ALD-Grown WO₃ Sulfurization Technique as a Channel Material for Field-Effect Transistors.

ABSTRACT: Ultrathin WS₂ films are promising functional materials for electronic and optoelectronic devices. Therefore, their synthesis over a large area, allowing control over their thickness and structure, is an essential task. In this work, we investigated the influence of atomic layer deposition (ALD)-grown WO₃ seed-film thickness on the structural and electrical properties of WS₂ nanosheets obtained via a sulfurization technique. Transmission electron microscopy indicated that the thinnest (1.9 nm) film contains rather big (up to 50 nm) WS₂ grains in the amorphous matrix. The signs of incomplete sulfurization, namely, oxysulfide phase presence, were found by X-ray photoemission spectroscopy analysis. The increase in the seed-film thickness of up to 4.7

SUBMITTER: Romanov RI

PROVIDER: S-EPMC8697369 | biostudies-literature | 2021 Dec

REPOSITORIES: biostudies-literature

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Thickness-Dependent Structural and Electrical Properties of WS₂ Nanosheets Obtained via the ALD-Grown WO₃ Sulfurization Technique as a Channel Material for Field-Effect Transistors.

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Thickness-Dependent Structural and Electrical Properties of WS2 Nanosheets Obtained via the ALD-Grown WO3 Sulfurization Technique as a Channel Material for Field-Effect Transistors.

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Thickness-Dependent Structural and Electrical Properties of WS₂ Nanosheets Obtained via the ALD-Grown WO₃ Sulfurization Technique as a Channel Material for Field-Effect Transistors.