Natural Boron and ¹⁰B-Enriched Hexagonal Boron Nitride for High-Sensitivity Self-Biased Metal-Semiconductor-Metal Neutron Detectors.

ABSTRACT: Metal-semiconductor-metal (MSM) detectors based on Ti/Au and Ni/Au interdigitated structures were fabricated using 2.5 micrometer thick hexagonal boron nitride (h-BN) layer with both natural and ¹⁰B-enriched boron. Current-voltage (I-V) and current-time (I-t) curves of the fabricated detectors were recorded with (I _N) and without (I _d) neutron irradiation, allowing the determination of their sensitivity (S = (I _N - I _d)/I _d = ΔI/I _d). Natural and ¹⁰B-enriched h-BN detectors exhibited high neutron sensitivities of 233 and 367% at 0 V bias under a flux of 3 × 10⁴ n/cm²/s, respectively. An imbalance in

SUBMITTER: Mballo A 

PROVIDER: S-EPMC8757347 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature