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Stability Improvement of Perovskite Solar Cells by the Moisture-Resistant PMMA:Spiro-OMeTAD Hole Transport Layer.


ABSTRACT: Perovskite solar cells (PSCs) based on the 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) hole transport layer have exhibited leading device performance. However, the instability caused by this organic function layer is a very important limiting factor to the further development of PSCs. In this work, the spiro-OMeTAD is doped with polymethyl methacrylate (PMMA), which is further used as the hole transport layer to improve the device stability. It is shown that the PMMA can effectively improve the moisture and oxygen resistance of spiro-OMeTAD, which leads to improved device stability by separating the perovskite layer from moisture and oxygen. The device efficiency can maintain 77% of the original value for PSCs with the PMMA-doped spiro-OMeTAD hole transport layer, under a natural air environment (RH = 40%) for more than 80 days. The results show that the moisture- and oxygen-resistant PMMA:spiro-OMeTAD hole transport layer is effective at improving the device performance.

SUBMITTER: Ma S 

PROVIDER: S-EPMC8782036 | biostudies-literature | 2022 Jan

REPOSITORIES: biostudies-literature

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Stability Improvement of Perovskite Solar Cells by the Moisture-Resistant PMMA:Spiro-OMeTAD Hole Transport Layer.

Ma Shaohua S   Pang Shangzheng S   Dong Hang H   Xie Xiaoping X   Liu Gang G   Dong Peng P   Liu Dawei D   Zhu Weidong W   Xi He H   Chen Dazheng D   Zhang Chunfu C   Hao Yue Y  

Polymers 20220117 2


Perovskite solar cells (PSCs) based on the 2,2',7,7'-tetrakis(N,N-di-p-methoxyphenylamine)-9,9'-spirobifluorene (spiro-OMeTAD) hole transport layer have exhibited leading device performance. However, the instability caused by this organic function layer is a very important limiting factor to the further development of PSCs. In this work, the spiro-OMeTAD is doped with polymethyl methacrylate (PMMA), which is further used as the hole transport layer to improve the device stability. It is shown th  ...[more]

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