Browse
Submit Data
Databases
API
Help

Dataset Information

0 Views

0 Connections

0 Citations

0 Reanalyses

0 Downloads

Omics score: 0

Band engineering of Dirac materials in Sb _m Bi _n lateral heterostructures.

ABSTRACT: Band engineering the electronic structures of Sb _m Bi _n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations. The spin-orbit coupling is found to be crucial in determining electronic structures of Sb _m Bi _n LHS. The results indicate that these lateral heterostructures have a type-II band alignment which can be easily tuned using their size and tensile strain. The band gap tends to zero when the lateral heterostructure size is larger than a critical value, which intrinsically corresponds to a semiconductor-to-semimetal transition. The band inversion near the Γ point occurs under suitable tensile strain, indicating that Sb _m Bi _n LHS are very promising to realize quantum spin Hall effects.

SUBMITTER: Liu Y

PROVIDER: S-EPMC9032838 | biostudies-literature | 2021 May

REPOSITORIES: biostudies-literature

ACCESS DATA

Json Xml

Publications

Band engineering of Dirac materials in Sb m Bi n lateral heterostructures.

Liu Yonghui Y

RSC advances 20210513 28

Band engineering the electronic structures of Sb m Bi n lateral heterostructures (LHS) from antimonene and bismuthene is systematically investigated using first principles calculations. The spin-orbit coupling is found to be crucial in determining electronic structures of Sb m Bi n LHS. The results indicate that these lateral heterostructures have a type-II band alignment which can be easily tuned using their size and tensil ...[more]

PMID: 35479692

Similar Datasets

Strain engineering of lateral heterostructures based on group-V enes (As, Sb, Bi) for infrared optoelectronic applications calculated by first principles.

Project description:In this work, the electronic structure, and optical properties of As/Sb and Sb/Bi lateral heterostructures (LHS) along armchair and zigzag interfaces affected by strain were investigated by density functional theory. The LHSs presented strain-dependent band transformation characteristics and sensitivity features. And a reduction and transition of the bandgap was observed when the As/Sb and Sb/Bi LHS existed under compressive strain. The density of states and the conduction band minimum-valence band maximum characteristics exhibited corresponding changes under the strain. Then a spatial charge-separation phenomenon and strong optical absorption properties in the mid-infrared range can also be observed from calculated results. Theoretical research into As/Sb and Sb/Bi LHSs has laid a solid foundation for As/Sb and Sb/Bi LHS device manufacture.

| S-EPMC9106107 | biostudies-literature

Emergent and Tunable Topological Surface States in Complementary Sb/Bi2Te3 and Bi2Te3/Sb Thin-Film Heterostructures.

Project description:Epitaxial thin-film heterostructures offer a versatile platform for realizing topological surface states (TSSs) that may be emergent and/or tunable by tailoring the atomic layering in the heterostructures. Here, as an experimental demonstration, Sb and Bi2Te3 thin films with closely matched in-plane lattice constants are chosen to form two complementary heterostructures: Sb overlayers on Bi2Te3 (Sb/Bi2Te3) and Bi2Te3 overlayers on Sb (Bi2Te3/Sb), with the overlayer thickness as a tuning parameter. In the bulk form, Sb (a semimetal) and Bi2Te3 (an insulator) both host TSSs with the same topological order but substantially different decay lengths and dispersions, whereas ultrathin Sb and Bi2Te3 films by themselves are fully gapped trivial insulators. Angle-resolved photoemission band mappings, aided by theoretical calculations, confirm the formation of emergent TSSs in both heterostructures. The energy position of the topological Dirac point varies as a function of overlayer thickness, but the variation is non-monotonic, indicating nontrivial effects in the formation of topological heterostructure systems. The results illustrate the rich physics of engineered composite topological systems that may be exploited for nanoscale spintronics applications.

| S-EPMC9245572 | biostudies-literature

Engineering electrode interfaces for telecom-band photodetection in MoS2/Au heterostructures via sub-band light absorption.

Project description:Transition metal dichalcogenide (TMD) layered semiconductors possess immense potential in the design of photonic, electronic, optoelectronic, and sensor devices. However, the sub-bandgap light absorption of TMD in the range from near-infrared (NIR) to short-wavelength infrared (SWIR) is insufficient for applications beyond the bandgap limit. Herein, we report that the sub-bandgap photoresponse of MoS2/Au heterostructures can be robustly modulated by the electrode fabrication method employed. We observed up to 60% sub-bandgap absorption in the MoS2/Au heterostructure, which includes the hybridized interface, where the Au layer was applied via sputter deposition. The greatly enhanced absorption of sub-bandgap light is due to the planar cavity formed by MoS2 and Au; as such, the absorption spectrum can be tuned by altering the thickness of the MoS2 layer. Photocurrent in the SWIR wavelength range increases due to increased absorption, which means that broad wavelength detection from visible toward SWIR is possible. We also achieved rapid photoresponse (~150 µs) and high responsivity (17 mA W-1) at an excitation wavelength of 1550 nm. Our findings demonstrate a facile method for optical property modulation using metal electrode engineering and for realizing SWIR photodetection in wide-bandgap 2D materials.

| S-EPMC10667329 | biostudies-literature

Dirac semimetal phase and switching of band inversion in XMg2Bi2 (X = Ba and Sr).

Project description:Topological Dirac semimetals (TDSs) offer an excellent opportunity to realize outstanding physical properties distinct from those of topological insulators. Since TDSs verified so far have their own problems such as high reactivity in the atmosphere and difficulty in controlling topological phases via chemical substitution, it is highly desirable to find a new material platform of TDSs. By angle-resolved photoemission spectroscopy combined with first-principles band-structure calculations, we show that ternary compound BaMg2Bi2 is a TDS with a simple Dirac-band crossing around the Brillouin-zone center protected by the C3 symmetry of crystal. We also found that isostructural SrMg2Bi2 is an ordinary insulator characterized by the absence of band inversion due to the reduction of spin-orbit coupling. Thus, XMg2Bi2 (X = Sr, Ba, etc.) serves as a useful platform to study the interplay among crystal symmetry, spin-orbit coupling, and topological phase transition around the TDS phase.

| S-EPMC8578568 | biostudies-literature

Observation of flat band, Dirac nodal lines and topological surface states in Kagome superconductor CsTi3Bi5.

Project description:Kagome lattices of various transition metals are versatile platforms for achieving anomalous Hall effects, unconventional charge-density wave orders and quantum spin liquid phenomena due to the strong correlations, spin-orbit coupling and/or magnetic interactions involved in such a lattice. Here, we use laser-based angle-resolved photoemission spectroscopy in combination with density functional theory calculations to investigate the electronic structure of the newly discovered kagome superconductor CsTi3Bi5, which is isostructural to the AV3Sb5 (A = K, Rb or Cs) kagome superconductor family and possesses a two-dimensional kagome network of titanium. We directly observe a striking flat band derived from the local destructive interference of Bloch wave functions within the kagome lattice. In agreement with calculations, we identify type-II and type-III Dirac nodal lines and their momentum distribution in CsTi3Bi5 from the measured electronic structures. In addition, around the Brillouin zone centre, [Formula: see text] nontrivial topological surface states are also observed due to band inversion mediated by strong spin-orbit coupling.

| S-EPMC10333313 | biostudies-literature

Photoluminescence Enhancement by Band Alignment Engineering in MoS2/FePS3 van der Waals Heterostructures.

Project description:Single-layer semiconducting transition metal dichalcogenides (2H-TMDs) display robust excitonic photoluminescence emission, which can be improved by controlled changes to the environment and the chemical potential of the material. However, a drastic emission quench has been generally observed when TMDs are stacked in van der Waals heterostructures, which often favor the nonradiative recombination of photocarriers. Herein, we achieve an enhancement of the photoluminescence of single-layer MoS2 on top of van der Waals FePS3. The optimal energy band alignment of this heterostructure preserves light emission of MoS2 against nonradiative interlayer recombination processes and favors the charge transfer from MoS2, an n-type semiconductor, to FePS3, a p-type narrow-gap semiconductor. The strong depletion of carriers in the MoS2 layer is evidenced by a dramatic increase in the spectral weight of neutral excitons, which is strongly modulated by the thickness of the FePS3 underneath, leading to the increase of photoluminescence intensity. The present results demonstrate the potential for the rational design of van der Waals heterostructures with advanced optoelectronic properties.

| S-EPMC9335528 | biostudies-literature

Potential lead-free small band gap halide double perovskites Cs2CuMCl6 (M = Sb, Bi) for green technology.

Project description:Explorations of stable lead-free perovskites have currently achieved substantial interest to overcome the instability and avoid toxicity related issue faced with the lead-based perovskites. In this study, we have comprehensively studied the stability, nature and origin of electronic, transport and optical properties of inorganic halide double perovskites, which could provide a better understanding of their possible potential applications. The density functional theory is used to investigate the different physical properties of these materials. The stability of these cubic materials is validated by optimizing the structure, tolerance factor, mechanical stability test. The materials are small band gap semiconductors with outshining optoelectronic performance. Due to high optical absorption, high conductivity and low reflectivity they have great potential to be used for optoelectronic application purpose. Because of small band gap we have also investigated the variation of various transport parameters with chemical potential. The semiconducting nature of materials results in ZT close to unity predicting its excellent application in thermoelectric technology.

| S-EPMC8217524 | biostudies-literature

The spin Hall effect of Bi-Sb alloys driven by thermally excited Dirac-like electrons.

Project description:We have studied the charge to spin conversion in Bi1-x Sb x /CoFeB heterostructures. The spin Hall conductivity (SHC) of the sputter-deposited heterostructures exhibits a high plateau at Bi-rich compositions, corresponding to the topological insulator phase, followed by a decrease of SHC for Sb-richer alloys, in agreement with the calculated intrinsic spin Hall effect of Bi1-x Sb x . The SHC increases with increasing Bi1-x Sb x thickness before it saturates, indicating that it is the bulk of the alloy that predominantly contributes to the generation of spin current; the topological surface states, if present, play little role. Unexpectedly, the SHC is found to increase with increasing temperature, following the trend of carrier density. These results suggest that the large SHC at room temperature, with a spin Hall efficiency exceeding 1 and an extremely large spin current mobility, is due to increased number of thermally excited Dirac-like electrons in the L valley of the narrow gap Bi1-x Sb x alloy.

| S-EPMC7060068 | biostudies-literature

Evidence for higher order topology in Bi and Bi0.92Sb0.08.

Project description:Higher order topological insulators (HOTIs) are a new class of topological materials which host protected states at the corners or hinges of a crystal. HOTIs provide an intriguing alternative platform for helical and chiral edge states and Majorana modes, but there are very few known materials in this class. Recent studies have proposed Bi as a potential HOTI, however, its topological classification is not yet well accepted. In this work, we show that the (110) facets of Bi and BiSb alloys can be used to unequivocally establish the topology of these systems. Bi and Bi0.92Sb0.08 (110) films were grown on silicon substrates using molecular beam epitaxy and studied by scanning tunneling spectroscopy. The surfaces manifest rectangular islands which show localized hinge states on three out of the four edges, consistent with the theory for the HOTI phase. This establishes Bi and Bi0.92Sb0.08 as HOTIs, and raises questions about the topological classification of the full family of BixSb1-x alloys.

| S-EPMC8292335 | biostudies-literature

Strain Relaxation in "2D/2D and 2D/3D Systems": Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe Heterostructures.

Project description:Strain engineering as a method to control functional properties has seen in the last decades a surge of interest. Heterostructures comprising 2D-materials and containing van der Waals(-like) gaps were considered unsuitable for strain engineering. However, recent work on heterostructures based on Bi2Te3, Sb2Te3, and GeTe showed the potential of a different type of strain engineering due to long-range mutual straining. Still, a comprehensive understanding of the strain relaxation mechanism in these telluride heterostructures is lacking due to limitations of the earlier analyses performed. Here, we present a detailed study of strain in two-dimensional (2D/2D) and mixed dimensional (2D/3D) systems derived from mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe heterostructures, respectively. We first clearly show the fast relaxation process in the mica/Bi2Te3 system where the strain was generally transferred and confined up to the second or third van der Waals block and then abruptly relaxed. Then we show, using three independent techniques, that the long-range exponentially decaying strain in GeTe and Sb2Te3 grown on the relaxed Bi2Te3 and Bi2Te3 on relaxed Sb2Te3 as directly observed at the growth surface is still present within these three different top layers a long time after growth. The observed behavior points at immediate strain relaxation by plastic deformation without any later relaxation and rules out an elastic (energy minimization) model as was proposed recently. Our work advances the understanding of strain tuning in textured heterostructures or superlattices governed by anisotropic bonding.

| S-EPMC7905873 | biostudies-literature